SAMSUNG MZWLR3T8HBLS-00007 3.84GB PM1733 EVT2 2.5" PCIe 4.0 x4 SSD


Code: MZWLR3T8HBLS-00007

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Delivering Highly Optimised Performance for Various Data Centre Applications

The Samsung PM1733 SSD is optimised to excel in virtually any data centre scenario. This enterprise-level, ultra-high performance SSD provides exceptional random read speeds and is particularly suitable for read-intensive data centre applications.

Delivering Dual-Port NVMe to the Enterprise

PM1733 supports dual-port functionality, enabling high availability via two access paths to the storage array controller. This delivers the reliability, availability and serviceability (RAS) that is required for enterprise storage, allowing SAS SSDs to be replaced by high-performance NVMe SSDs in all-flash-array architectures.

Get the Most from Your Flash

Samsung’s SSD virtualisation technology allows a single SSD to be subdivided into a maximum of 64 smaller SSDs, providing independent virtual workspaces. It also enables SSDs to take on certain tasks typically carried out by the server CPUs, such as SingleRoot I/O Virtualisation (SR-IOV), requiring fewer server CPUs and SSDs. This significantly reduces the server footprint, for enhanced overall IT efficiency.

V-NAND Machine Learning, a new functionality available only on the Samsung PM1733, helps the SSD to accurately predict and verify cell characteristics, as well as detect any variation among circuit patterns through big data analytics. This capability allows the PM1733 to offer the superior data reliability, greater performance, and more efficient use of capacity needed in server and data centre storage systems.


• Fail-In-Place technology: Ensures the SSD operates normally even when errors occur at the chip level.  
• Zoned Namespace: PM1733 is capable of supporting ZNS implementations.
• FIPS compliance: PM1733 can be FIPS certified to satisfy government requirements.






Form Factor



15 mm


PCIe 4.0 (x4)

Host Controller Interface

NVMe 1.3


Flash Memory Type

Samsung V-NAND

Max. Read

7000 MB/s

Max. Write

3800 MB/s

DRAM Cache Memory


DRAM Cache Memory Type

Max. Random Read 4K

150,000 IOPS

Max. Random Write 4K

135,000 IOPS



Special Features

NVMe-MI (Management Interface) Support

TCG/Opal V2.0

Power Consumption (active)

Max. Endurance Rating


Max. Operating Vibration

Max. Non-operating Vibration

Max. Operating Shock

Max. Non-operating Shock


OS Support




69 x 15 x 100 mm (WxHxD)

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