Samsung's 860 DCT SSDs deliver optimized performance and value for read-intensive applications like servers and data centers.
They feature Samsung's proprietary V-NAND technology and are built from Samsung components for a high density, reliable enterprise storage solution with low power consumption, strong data security and proactive monitoring
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Optimized Performance & Value
Built to handle the heavier workloads of data center usage, the 860 DCT delivers a high level of sustained performance at a great value for your business.
The 860 DCT is optimized for server and data center environments by offering reinforced endurance, low power consumption and a 3-year limited warranty.
Data Protection for Peace of Mind
Secure data without performance degradation thanks to AES 256-bit encryption.
Efficient Power Management
Thanks to low power consumption, you can enhance efficiency for operations and maintenance.
Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Samsung's solid state drives are built entirely from Samsung components, leveraging our extensive OEM expertise to allow complete, optimized integration.
Features• Designed for optimized performance and value in read-intensive enterprise applications thanks to Samsung's proprietary 3-bit MLC V-NAND.
• Delivers enhanced efficiency for operations and maintenance thanks to low power consumption.
• Reliable solid state drive with the endurance to handle heavy workloads for servers.
• Built from Samsung components with 3-year limited warranty.
|Interface||SATA 3.0 (6Gb/s)|
|Host Controller Interface||AHCI|
|Flash Memory Type||3-bit MLC V-NAND|
|Max. Read||550 MB/s|
|Max. Write||520 MB/s|
|DRAM Cache Memory||N/A|
|DRAM Cache Memory Type|
|Max. Random Read 4K||98,000 IOPS|
|Max. Random Write 4K||19,000 IOPS|
|Power Consumption (active)||2.9|
|Max. Endurance Rating|
|MTBF||1.5 million Hours|
|Max. Operating Vibration|
|Max. Non-operating Vibration|
|Max. Operating Shock||1500 G, duration 0.5 ms, Half Sine Wave|
|Max. Non-operating Shock||1500 G, duration 0.5 ms, Half Sine Wave|
|Connectivity||1 x SATA 3.0 (6Gb/s)|